Nitrides Seminars

Fall 2009

Date & Time Speaker Title & Location
Wednesday, October 14

12:00PM
Ravi Shivaraman
Graduate Student, Materials UCSB
Atom Probe Microscopy

Location: ESB 1001
Wednesday, October 28

12:00PM
David Brown
Graduate Student, Electrical & Computer Engineering
UCSB
MOCVD Grown of In-polar and N-polar InAlN
for Electronic Applications

Location: ESB 1001
Wednesday, November 18

12:00PM
John L. Lyons
Graduate Student, Materials
UCSB
Impurities and Native Defects in the Group-III Nitrides

Location: ESB 2001

Spring 2009

Date & Time Speaker Title & Location
Wednesday, April 15

12:00PM
Dr. Emmanouil "Manos" Kioupakis
Postdoctorial Researcher, UCSB
Free-carrier Absorption in Nitride Photonic Devices

Location: ESB 1001
Wednesday, April 22

12:00PM
CANCELLED NA

Location: ESB 1001
Wednesday, April 29

4:00PM
Dr. Scott Messenger

US Naval Research Laboratory
Radiation Effects and Modeling in Solar Cells

Location: Elings Hall, Room 1601
Friday, May 1

12:00PM - 2:00PM
Anthony Orler
Partner at Gates & Cooper Law Firm
Adjunct Professor at Loyola Law School
Patents 101 seminar sponsored by UCSB Office of Technology & Industry Alliances

Location: ESB 1001
Wednesday, May 6

12:00PM
You-da Lin
Graduate Student Researcher,UCSB
Nonpolar InGaN/GaN Near Green Lasers

Location: ESB 1001
Wednesday, May 13

12:00PM
Siddha Pimputkar
Graduate Student Researcher,UCSB
Ammonothermal Growth of Bulk GaN

Location: ESB 1001
Wednesday, May 20

12:00PM
Stuart Brinkley
Graduate Student Researcher,UCSB
Chip Shaping for Light Extraction Enhancement on Bulk c-plane GaN

Location: ESB 1001
Wednesday, May 27

12:00PM
Srabanti Chowdurhy
Graduate Student Researcher,UCSB
AlGaN/GaN Current Aperture Vertical Electron Transistors

Location: ESB 1001
Tuesday, June 9

12:00PM
Dr. Naoki Ohashi
Director, Optronic Materials Center
National Institute for Materials Science, Japan
Understanding and Controlling of Charge Compensation Phenomena in Zinc Oxide

Location: ESB 1001

Winter 2009

Date & Time Speaker Title & Location
Wednesday, January 21

3:00PM
Shigeru Komatsu &
Tatsuo Akiyama
Toshiba Corporation Semiconductor Company


Ric Borges
Synopsys, Inc.
Frontier of "Design for Manufacturing" based on Simulation Technology

and

Simulation of Compound Semiconductor Devices using Sentaurus TCAD

Location: ESB 1001
Wednesday, January 21

4:00PM
Dr. Key Mei Lau
Professor, Hong Kong University of Science & Technology
Hetero-epitaxy of III-V Compounds on Silicon Substrates by MOCVD for Device Applications

Location: MRL 2053
Monday, January 26

12:00PM
Dr. Atsushi Yamaguchi
Professor, Kanazawa Institute of Technology, Japan
Theoretical Investigation of Polarization Properties in InGaN Quantum Wells on Semipolar and Nonpolar Substrates

Location: MRL 2053
Thursday, January 29

12:00PM
Yohjiro Kawai
Ph.D. Scholar, Meijo University
InGaN Growth With Various InN Mole Fraction on ZnO Substrate by MOVPE

Location: ESB 1001
Friday,
January 30

12:00PM
Jong-In Shim
Professor, Hanyang University, Korea
Design and Characterization Issues in GaN-based Light Emitting Diodes

Location: ESB 2001
Wednesday,
February 18

12:00PM
Dobri Simeonov
Postdoc (Speck) UCSB
Characterization of GaN Quantum Dots

Location: ESB 1001
Thursday,
March 5

12:00PM
Qimin Yan
Graduate Student Researcher (Van de Walle) UCSB
Unexpected Effects of Strain on Nitride Band Structures

Location: ESB 1001
Wednesday,
March 11

12:00PM
Sansaptak Dasgupta
Graduate Student Researcher (Mishra) UCSB
Progress in N-face GaN on Si by MBE.

Location: ESB 1001